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Type: 
Journal
Description: 
Nitrogen dioxide gas sensor devices, based on porous silicon, have been investigated in the sub-ppm range at room temperature (RT) monitoring humidity, illumination, gas concentration and flow rate. The devices, realized changing silicon doping, resistivity and etching parameters, have been characterized measuring the electrical conductance versus NC; in air at constant relative humidity (RH). It has been found that hysteresis and the sensor performances improve if a prolonged exposure to high concentrations of NO, is adopted as pre-treatment method. The investigation on stability and selectivity has been cºmpleted recording the device performances over several days in ambient air,
Publisher: 
World Scientific
Publication date: 
23 Jun 2005
Authors: 

E MASSERA, I REA

Biblio References: 
Pages: 139
Origin: 
Sensors And Microsystems-Proceedings Of The 9th Italian Conference