We have investigated on the response of two porous silicon samples, n-type and p-type doped, to oxygen. Both the samples czhibit a quenching following the Stern-Wolmer mºdel. Time resºlved PL measurements have been also carried out in ºrder tº measure the carrier lifetime in absence of the quencher. The reactivity rate constant has been computed and it has been fºund to depend, for n-doped sample, on the characteristic nano-dimension of the emitting structure. This suggest that chemical reactivity is strictly correlated to the confinement size.
23 Jun 2005
Sensors And Microsystems-Proceedings Of The 9th Italian Conference