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The activity is mainly focused on the design, fabrication and characterization of silicon-compatible photonic devices based on materials that can be deposited at low temperature (<400°C). The low temperature of deposition would allow integrating optical functionalities with a pre-existent electronic silicon circuitry. Materials such as: erbium (Er) deposited by magnetron sputtering, amorphous hydrogenated silicon (a-Si:H) deposited by PECVD and graphene, are investigated in order to manipulate light in particular concerning the functionalities of modulation and detection at near-infrared wavelengths.


Contact: Maurizio Casalino