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PECVD / RIE-ICP system
model
manufactured
year
Responsible:
custom
Angelantoni
/
Plasma system with two vacuum chambers, one with a PECVD reactor and the other one with a ICP-RIE reactor. The system is equipped with a load-lock chamber that allow moving the sample from the PECVD chamber to the ICP-RIE chamber and vice versa without leaving the vacuum state. Process gases used in the PECVD process are SiH4, NH3, O2, N2O to deposit silicon nitride, amorphous silicon and silicon oxide. In the RIE chamber are used SF6, CF4, CHF3, O2 to etching silicon nitride, silicon oxide and silicon. It’s also possible to perform ICP etching processes with high aspect ratio. The entire system is controlled through pc in remote mode by a Lookout platform in Windows NT ambient.
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Processes:
PECVD deposition of a.Si:H, SiNx, SiOx
RIE etchiong of Si, SiO2, Si3N4
ICP etching of Si, SiO2, Si3N4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PECVD / RIE system
model
manufactured
year
Responsible:
PlasmaLab 80
OXFORD Instruments
/
Plasma system with two vacuum chambers, one with a PECVD reactor and the other one with a RIE reactor. Process gases used in the PECVD process are SiH4, NH3 and O2 to deposit silicon nitride and amorphous silicon. In the RIE chamber are used CF4, CHF3, O2 to etching silicon nitride and silicon oxide. The O2 plasma in the RIE chamber is used to cleaning and/or activation surface too. The entire system is controlled through pc in remote mode by a Lookout platform in Windows NT ambient. 

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Processes:
PECVD deposition of a.Si:H, SiNx
RIE etching of SiO2, Si3N4
Surface activation by O2 plasma
Plasma Ashing by O2 plasma

 

 

 

 

 

 

 

 

 

 

 

 

 

Magnetron Sputtering
model
manufactured
year
Responsible:
 LS 300
SISTEC
/
Magnetron Sputtering system with four completely independent target, 4” dia, connected to four different power supplies, 2 RF, 1 DC-pulsed and 1 DC. It’s possible to deposit 4 different material at the same time, to operate in co-sputtering mode and in reactive mode by using O2 process gas. Min. pre-process pressure 1•10-8 mbar, operative temperature range t.a. up to 550 °C, Ar and O2 process gas 

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Processes:
Thin film deposition of materials listed below:
a-Si, SiC, Si3N4, NiCr, ZnO, ITO, Ti, Li3NbO4, Al2O3, Al, SiO2, Er. 

 

 

 

 

 

 

 

 

 

 

 

 

 

e-beam Evaporator 
model
manufactured
year
Responsible:
/ SISTEC
/
e-Beam evaporator system with a rotary pocket evaporation sources with four 25 cc crucibles. It’s possible to deposit four different material in sequence mode, without leaving the vacuum state, on four 4” different substrates . It’s equipped with a cryogenic pump, min. operative pressure E -8 mbar, operative temperature range t.a. up to 300 °C, with a 10 kW power supply. 

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Processes:

Metallization Process
Thin film deposition of metals listed below: Al, Ti 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Evaporator 
model
manufactured
year
Responsible.
/ EMTecnoservices
/
Thermal Evaporator double source with turbomolecular pump, min. operative pressure E -7 mbar, max power 3,6 kW, operative temperature range t.a. up to 400 °C.

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Processes:
Metallization Process
Thin film deposition of metals listed below:
Au, Al, Cu, Pd, Pt, Ag, Cr, Ni
 

 

 

 

 

 

 

 

 

 

 

 

Rapid Thermal Anneal Oven
model
manufactured
year
Responsible:
RTP-600 ModularPro
/
Thermal Furnace for rapid treatments with an integrated computer control system and software. The integrated process control system features real-time graphics, recipe management, data acquisition and display and has a comprehensive diagnostic function. 
 
Wafer Size: 2" to 6"
Temperature Range: 250-1300 deg. C
Ramp Rate: 0-150 deg. C/sec.
Temperature Control Repeatability: +/-2 deg. C
Temperature Accuracy: +/-2 deg. C

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Processes:
Ohmic contact Al/Si formation
Rapid Annealing

 

 

 

 

 

 

 

 

 

 

 

Silicon Oxidation Oven
model
manufactured
year
Responsible:
PEO-601 ATV Technologie GmbH
/
Thermal Furnace dedicated to Wet and Dry silicon oxidation.
 
Process gas available O2, H2O, N2
Max 40 wafer/process run 
Up to 100mm wafers
Easily exchangeable quartz In Liners
Temperature Ramping:
- Up to 1.000°C  within 15 minutes
- Down to < 100°C in less than 60 minutes
- 1K per 100 minutes (slowest ramping speed)
Temperature range 150°C to 1.100°C  
100 steps/program

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Processes:
Wet and Dry silicon oxidation

 

 

 

 

 

 

 

 

 

 

Metallographic Microscope 
model
manufactured
year
Responsible:
DM6000 M Leica
/
Digital microscope working both in transmission e reflection mode with fully automated incident light axis for BrightField, DarkField, Polarization and DIC. It’s equipped with motorized z focus drive and motorized objectives turret, with magnification from1,25 X to 100 X. Controllable by remote with a Leica proprietary software for acquisition and elaboration of images.

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Processes:

 

 

 

 

 

 

 

 

 

 

 

 

IMM-Naples Micro/Nano Fabrication Clean Room